Ultrathin Gate Oxide Reliability: Physical Models, Statistics, and Characterization
نویسنده
چکیده
The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of defects required to cause breakdown and percolation theory will be used to describe the observed statistical failure distributions for ultrathin gate dielectric breakdown. Recent observations of a voltage dependent voltage acceleration parameter and non-Arrhenius temperature dependence will be presented. The current understanding of soft breakdown will be discussed and proposed techniques for detecting breakdown presented. Finally, the implications of soft breakdown on circuit functionality and the applicability of applying current reliability characterization and analysis techniques to project the reliability of future alternative gate dielectrics will be discussed.
منابع مشابه
Physical and Predictive Models of Ultra Thin Oxide Reliability in CMOS Devices and Circuits
The microelectronics industry owes its considerable success largely to the existence of the thermal oxide of silicon. However, recently there is concern that the reliability of ultra-thin dielectrics will limit further scaling to slightly thinner than 2nm. I will review the physics and statistics of dielectric wearout and breakdown in ultra thin SiO2-based gate dielectrics and discuss the impli...
متن کاملDefect generation in ultrathin silicon dioxide films produced by anode hole injection
A direct demonstration of defect generation in ultrathin silicon dioxide films due to the transport of holes through this layer is reported. These defects are observed only when the hole current to the cathode of the device exceeds the electron current to the anode. This condition is produced on p-channel field-effect transistors under negative gate-voltage-bias conditions with ultrathin gate o...
متن کاملCharacterization and Modeling of Edge Direct Tunneling (EDT) Leakage in Ultrathin Gate Oxide MOSFETs
This paper examines the edge direct tunneling (EDT) of electron from n polysilicon to underlying n-type drain extension in off-state n-channel MOSFET’s having ultrathin gate oxide thicknesses (1.4–2.4 nm). It is found that for thinner oxide thicknesses, electron EDT is more pronounced over the conventional gate-induced-drain-leakage (GIDL), bulk band-to-band tunneling (BTBT), and gate-to-substr...
متن کاملThe Performance and Reliability of PMOSFET’s with Ultrathin Silicon Nitride/Oxide Stacked Gate Dielectrics with Nitrided Si-SiO2 Interfaces Prepared by Remote Plasma Enhanced CVD and Post-Deposition Rapid Thermal Annealing
Ultrathin ( 1.9 nm) nitride/oxide (N/O) dual layer gate dielectrics have been prepared by the remote plasma enhanced chemical vapor deposition (RPECVD) of Si3N4 onto oxides. Compared to PMOSFET’s with heavily doped p-poly-Si gates and oxide dielectrics, devices incorporating the RPECVD stacked nitrides display reduced tunneling current, effectively no boron penetration and improved interface ch...
متن کامل